In recent years, environment compatibility, energy efficiency, flexibility and cost reduction have emerged as critical global issues across the semiconductor industry. Over the years, the electronics industry has been launching various power semiconductor solutions, such as insulated gate bipolar transistors (IGBTs) and super junction MOSFETs (metal oxide field effect transistor). IGBTs and super junction MOSFETs are used in switching applications in different end-user applications, including uninterrupted power supplies (UPS), wind turbines, PV inverters, rail tractions, electric vehicles and hybrid electric vehicles, and other industrial applications. IGBT offers faster switching and higher efficiency. As a power semiconductor device, it competes against other devices and technologies such as Gallium Nitride (GaN), MOSFETs, and Silicon Carbide (SiC) in the market. IGBTs offer the features of both bipolar transistor and MOSFETs offering both high-voltage and high input impedance. IGBTs are preferred for the applications which require high breakdown voltage and high input impedance, owing to their better conductivity modulation characteristics. IGBTs are cost effective as compared to traditional MOSFETs and are replacing traditional MOSFETs in various applications. IGBTs are preferred in motor drive applications where high current and voltage are required. Super junction MOSFETs achieve significant improvement over conventional MOSFETs by employing the principle of super junction charge-balance. Super-junction MOSFETs are manufactured with a deep-trench process technique. The market for IGBT is focusing on IGBT chip optimization, owing to the improved demand for thermal resistive, increased power output and higher density. The demand for super junction MOSFETs is high in applications that require significantly high power ratings. The market for power electronics device is flourishing in recent years and is expected to grow further in coming years. Super junction MOSFETs and IGBT both are catering the requirement in various application markets and the demand for both would grow in coming years.
The study titled “IGBT and Super Junction MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends, and Forecast, 2013 – 2019” aims to comparatively analyze these two power semiconductor products across various application segments and provides market insights and data about the size and growth of each segment. The application segments analyzed in this report include uninterrupted power supplies (UPS), wind turbines, photovoltaic (PV) inverters, rail traction, consumer applications, electric vehicles/hybrid electric vehicles (EV/HEV), motor drives, industrial applications, converters/adapters/chargers, lighting and others (servers, networking equipment, etc). Apart from this, the report also analyzes the discrete and module product types for both IGBT and super junction MOSFETs. The study attempts to provide a thorough coverage of the underlying technological and economic issues affecting the IGBT and super junction MOSFET business. The report provides an in-depth analysis of the global market, which has been further segmented into major geographies including North America, Europe, Asia-Pacific, and Rest of the World (RoW). The segmentation has been done to provide strategic insight into each category, enabling stakeholders across the value chain to gain considerable business intelligence. The report identifies factors driving and restraining the growth, and future business opportunities in the IGBT and super junction MOSFET market. The competitive landscape section in the report provides market share analysis of the major players in the global market in 2012.
Besides analyzing the global IGBT and super junction MOSFET market segment-wise, the report includes profiles of major players covering their market position, business strategies and various recent developments pertaining to products and applications. The major companies covered in the report are Mitsubishi Electric Corporation (Japan), Fairchild Semiconductor International Inc. (U.S.), Infineon Technologies AG (Germany), STMicroelectronics N.V. (Switzerland), ABB Ltd. (Switzerland), Hitachi Power Semiconductor Device Ltd. (Japan), Toshiba Corporation (Japan), Vishay Intertechnology Inc (U.S.), Fuji Electric Co. Ltd. (Japan), and Semikron Inc (Germany).