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GaN on Silicon Technology becomes Exceptional Semiconductor Technology for Next-Generation Wireless Infrastructure

Press release Description

Albany, New York, August 23, 2019: Gallium Nitride on Silicon technology has come up as an ideal technology to take over from laterally diffused metal oxide (LDMO) semiconductor technology that ruled the roost for decades. GaN on silicon technology has complied with the rigorous reliability requirements and aims at ameliorating RF performance and reliability.

These insights are according to the intelligence report, titled, “GaN on Silicon Technology Market—Global Industry Analysis, Size, Share, Growth, Trends, and Forecast, 2019-2027,” which has been freshly added to Market Research Reports Search Engine’s (MRRSE) overarching armamentarium.

GaN on silicon technology in RF semiconductor industry has brought a paradigm shift in the the development of commercial wireless infrastructure. Competitive edge of GaN on silicon against LDMOS technology has spurred its adoption for 4G LTE basestatoins and perceiving it as the potential enabling technology for 5G wireless infrastructure that would likely have a seismic market implications that could influence encompassing transportation, mobile phone connectivity, entertainment and industrial applications, namely.

With imminent roll out of 5G infrastructure build-out, focus has increased on manufacturing and surge capacities, cost structures, and supply chain flexibility. Nevertheless, GaN on silicon technology has turned out to be an exceptional semiconductor technology for next-generation wireless infrastructure.

Prominent semiconductor manufacturers such as Texas Instruments and Nexperia are profoundly investing on GaN technology. For instance, in May 2019, Cree Inc. rolled out its plan to invest ~US$ 1 billion that will help in bolstering its silicon carbide production capacity.

GaN on Silicon Technology Market: Report Content

Quantitative and qualitative assessment exhort intelligence and overarching report on the GaN on silicon technology market. Further, the report thoroughly delineates various aspects of the market that will potentially have considerable influence on the development of the GaN on silicon technology market. As such, those aspects incorporate drivers, trends, restraints, and opportunities. Furthermore, the report elucidates segregation of the market that provides an exhaustive analysis on GaN on silicon technology.

An insightful and deep-dive assessment of the competitive assessment of the GaN on silicon technology market pins hope on Porters’ Five Force Analysis. Accordingly, the Porters’ Five Force Analysis offers a pressing analysis on the potential strategies of the preeminent players in the GaN on silicon technology market. In addition, the business strategies counts on company overview, product portfolio, SWOT analysis, key differentiation and recent development.

GaN on Silicon Technology Market: Research Methodology

Primary sources and secondary sources propel intelligence report on GaN on silicon technology market that provide deep dive analysis on the market. As such, the report provides reliable and unbiased projections, and assessments which have palpable impact on the market size and historical data. Besides, the report also counts on primary sources which hinges upon in-depth and intelligent analysis from well-grounded and reliable experts, telephonic interview, and a thorough assessment from surveys and seasoned analyst. Report on GaN on silicon technology market further acknowledges secondary sources—namely—Factiva, EC filing, press release, trade journals, resourceful database and governmental websites.

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